STF5N62K3

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Design Win

N沟道620 V、1.28 Ohm典型值、4.2 A SuperMESH3(TM) 功率MOSFET,TO-220FP封装

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产品概述

描述

This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.

  • 所有功能

    • 100% avalanche tested
    • Extremely high dv/dt capability
    • Very low intrinsic capacitance
    • Improved diode reverse recovery characteristics
    • Zener-protected

EDA符号、封装和3D模型

意法半导体 - STF5N62K3

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