STF11N65M2(045Y)

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N沟道650 V、0.60 Ohm典型值、7 A MDmesh M2功率MOSFET,TO-220FP窄引线封装

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产品概述

描述

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

EDA符号、封装和3D模型

STMicroelectronics - STF11N65M2(045Y)

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