STD130N4F6AG

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汽车级N沟道40 V、3.0 mOhm典型值、80 A STripFET F6功率MOSFET,DPAK封装

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产品概述

描述

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.

  • 所有功能

    • Designed for automotive applications and AEC-Q101 qualified
    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss

EDA符号、封装和3D模型

STMicroelectronics - STD130N4F6AG

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