STB80NF55-06T

NRND
Design Win

N沟道55 V、5 mOhm、80 A STripFET(TM) II功率MOSFET,D2PAK封装

下载数据手册

产品概述

描述

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.

EDA符号、封装和3D模型

STMicroelectronics - STB80NF55-06T

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Please select one model supplier :

Symbols

符号

Footprints

封装

3D model

3D模型

质量与可靠性

产品型号 Marketing Status 等级规格 符合RoHS级别 材料声明**
STB80NF55-06T
NRND
D2PAK 汽车应用 Ecopack1

STB80NF55-06T

Package:

D2PAK

Material Declaration**:

PDF XML

Marketing Status

NRND

Package

D2PAK

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

Swipe or click the button to explore more details Don't show this again
产品型号
供货状态
Budgetary Price (US$)*/Qty
从ST订购
Order from distributors
包装类型
RoHS
Country of Origin
ECCN (US)
ECCN (EU)
STB80NF55-06T
Available at distributors

经销商的可用性 STB80NF55-06T

代理商名称
地区 库存 最小订购量 第三方链接

代理商库存报告日期:

无法联系到经销商,请联系我们的销售办事处

STB80NF55-06T NRND

Budgetary Price (US$)*/Qty:
-
包:
包装类型:
RoHS:
Country of Origin:
ECCN (US):
ECCN (EU):

产品型号:

STB80NF55-06T

Swipe or click the button to explore more details Don't show this again

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商