产品概述
描述
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
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所有功能
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Source sensing pin for increased efficiency
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EDA符号、封装和3D模型
所有资源
资源标题 | 版本 | 更新时间 |
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SPICE models (1)
资源标题 | 版本 | 更新时间 | ||
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ZIP | 1.0 | 19 May 2023 | 19 May 2023 |
样片和购买
产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
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SCT060HU75G3AG | | | distributors 无法联系到经销商,请联系我们的销售办事处 |
SCT060HU75G3AG 批量生产