*RF4L10700CB4_rev1_0
*February/22/2022
*STMicroelectronics 
* GATEA , DrainA , Source , GATEB , DrainB
*
.SUBCKT  RF4L10700CB4 10 20 30	40	50
CGlead   10  30     4.8P
LG3lead  10  9     .329N
CMATCH2	 9   30     62.12p
LG2lead  9   8     .411N
CMATCH1   8  30      34.33p
LGATE    8   7     .12n     
RGATE    7  12     .15
CGD     12  19    2.4P
CGS     12  14     124P
LS       14  30     0.03N
CS	 14  30     0.1P
R        19  13     50
F1	 30	19	  Via	5.41
Via	17	18	0
R1	18	19	0.22
LD       19  20     .112N
CDlead   20  30     4.8P
MOS   13  12  14  14     mos_IDDE09133  L=1UM W= 133mM 
JFET  17  14  13         jf_IDDE09133		  
DBODY 14  19	d_IDDE09133

CGlead1   10  30     4.8P
LG3lead1  10  49     .329N
CMATCH21	 49   30     62.12p
LG2lead1  49   48     .411N
CMATCH11   48  30      34.33p
LGATE1    48   47     .12n     
RGATE1    47  412     .15
CGD1     412  419    2.4P
CGS1     412  414     124P
LS1       414  30     0.03N
CS1	 414  30     0.1P
R_1        419  413     50
F11	 30	419	  Via1	5.41
Via1	417	418	0
R11	418	419	0.22
LD1       419  20     .112N
CDlead1   20  30     4.8P
MOS1   413  412  414  414     mos_IDDE09133  L=1UM W= 133mM 
JFET1  417  414  413         jf_IDDE09133		  
DBODY1 414  419	d_IDDE09133

CGlead2   40  30     4.8P
LG3lead2  40  59     .329N
CMATCH22	 59   30     62.12p
LG2lead2  59   58     .411N
CMATCH12   58  30      34.33p
LGATE2    58   57     .12n     
RGATE2    57  512     .15
CGD2     512  519    2.4P
CGS2     512  514     124P
LS2       514  30     0.03N
CS2	 514  30     0.1P
R_2        519  513     50
F12	 30	519	  Via2	5.41
Via2	517	518	0
R12	518	519	0.22
LD2       519  50     .112N
CDlead2   50  30     4.8P
MOS2   513  512  514  14     mos_IDDE09133  L=1UM W= 133mM 
JFET2  517  514  513         jf_IDDE09133		  
DBODY2 514  519	d_IDDE09133

CGlead3   40  30     4.8P
LG3lead3  40  69     .329N
CMATCH23	 69   30     62.12p
LG2lead3  69   68     .411N
CMATCH13   68  30      34.33p
LGATE3    68   67     .12n     
RGATE3    67  612     .15
CGD3     612  619    2.4P
CGS3     612  614     124P
LS3       614  30     0.03N
CS3	 614  30     0.1P
R_3        619  613     50
F13	 30	619	  Via3	5.41
Via3	617	618	0
R13	618	619	0.22
LD3       619  50     .112N
CDlead3   50  30     4.8P
MOS3   613  612  614  614     mos_IDDE09133  L=1UM W= 133mM 
JFET3  617  614  613         jf_IDDE09133		  
DBODY3 614  619	d_IDDE09133

.MODEL mos_IDDE09133 nmos (vto=2.956 KP=1.3E-5 LAMBDA=0 RD=0.21958 RS=0.26852)
.MODEL jf_IDDE09133  njf  (VTO=-3.42 BETA=0.9 LAMBDA=1.245)
.MODEL d_IDDE09133	 d    (CJO=117p RS=0.5 VJ=6.67 M=0.73196 BV=90)

.ENDS



