*PD55035S-E_rev1_0
*March/25/2022
*STMicroelectronics 
* GATE , Drain , Source
*
.SUBCKT  PD55035S-E 10 20 30
CGlead   10  30     1P
LGATE    10   9     .5n     
RGATE    9  8     .4
CGD     8  7    6.1P
CGS     8  6     92P
LS       6  30     0.03N
CS	 6  30     0.1P
R        5  7     1000
F1	 30	5	  Via	16.09
Via	17	18	0
R1	18	5	1.38
LD       5  20     .22N
CDlead   20  30     1P
MOS   7  8  6 6    mos_PD55035S-E  L=.6UM W= 162mM 
JFET  17  6  7         jf_PD55035S-E		  
DBODY 7  5	d_PD55035S-E


.MODEL mos_PD55035S-E nmos (vto=2.86 KP=1.3E-6 LAMBDA=0 RD=0.01 RS=0.2705)
.MODEL jf_PD55035S-E  njf  (VTO=-1.25 BETA=1.4975 LAMBDA=3.755)
.MODEL d_PD55035S-E	 d    (CJO=150p RS=0.25 VJ=0.4 M=0.23725 BV=40)

.ENDS

