Datasheet

Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HU3PAK package

3 - January 2025

DS14077_SCT040HU120G3AG

Features


Order code	V_DS	R_DS(on) typ.	I_D
SCT040HU120G3AG	1200 V	40 mΩ	40 A

AEC-Q101 qualified
Very low R_DS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency

Applications

DC/DC converter for EV/HEV
Main inverter (electric traction)
On board charger (OBC)

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3^rd generation SiC MOSFET technology. The device features a very low R_DS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.


Product status link
SCT040HU120G3AG


Product summary
Order code	SCT040HU120G3AG
Top-side marking	40HU12AG
Back-side marking	SCT40HU12G3AG
Package	HU3PAK
Packing	Tape and reel

Electrical ratings

Table 1. Absolute maximum ratings
Symbol	Parameter	Value	Unit
V_DS	Drain-source voltage	1200	V
V_GS	Gate-source voltage	-10 to 22	V
	Gate-source voltage (recommended operating values)	-5 to 18
	Gate-source transient voltage, t_p < 1 μs, t ≤ 10 hours over lifetime	-11 to 25
I_D¹	Drain current (continuous) at T_C = 25 °C	40	A
I_D¹	Drain current (continuous) at T_C = 100 °C	40	A
I_DM²	Drain current (pulsed)	170	A
P_TOT	Total power dissipation at T_C = 25 °C	300	W
T_stg	Storage temperature range	-55 to 175	°C
T_J	Operating junction temperature range	-55 to 175	°C

Table 2. Thermal data
Symbol	Parameter	Value	Unit
R_thJC	Thermal resistance, junction-to-case	0.50	°C/W
R_thJA	Thermal resistance, junction-to-ambient	50	°C/W

¹ Limited by bonding wires.

² Pulse width is limited by safe operating area.

Electrical characteristics

T_C = 25 °C unless otherwise specified.

Table 3. On/off states
Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
V_(BR)DSS	Drain-source breakdown voltage	V_GS = 0 V, I_D = 1 mA	1200			V
I_DSS	Zero gate voltage drain current	V_GS = 0 V, V_DS = 1200 V			10	µA
I_GSS	Gate-body leakage current	V_DS = 0 V, V_GS = -10 to 22 V			±100	nA
V_GS(th)	Gate threshold voltage	V_DS = V_GS, I_D = 5 mA	1.8	3.0	4.2	V
R_DS(on)	Static drain-source on-resistance	V_GS = 15 V, I_D = 16 A		49		mΩ
		V_GS = 18 V, I_D = 16 A		40	54
		V_GS = 18 V, I_D = 16 A, T_J = 175 °C		72

Table 4. Dynamic
Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
C_iss	Input capacitance	V_DS = 800 V, f = 1 MHz, V_GS = 0 V	-	1329	-	pF
C_oss	Output capacitance		-	78	-	pF
C_rss	Reverse transfer capacitance		-	10	-	pF
Q_g	Total gate charge	V_DD = 800 V, V_GS = -5 to 18 V, I_D = 16 A	-	54	-	nC
Q_gs	Gate-source charge		-	14	-	nC
Q_gd	Gate-drain charge		-	20	-	nC
R_g	Gate input resistance	f = 1 MHz, I_D = 0 A	-	1.6	-	Ω

Table 5. Switching energy (inductive load)
Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
E_on	Turn-on switching energy	V_DD = 800 V, I_D = 16 A, R_G = 15 Ω, V_GS = -5 V to 18 V	-	267	-	µJ
E_off	Turn-off switching energy	V_DD = 800 V, I_D = 16 A, R_G = 15 Ω, V_GS = -5 V to 18 V	-	117	-	µJ

Table 6. Switching times
Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
t_d(on)	Turn-on delay time	V_DD = 800 V, I_D = 16 A, R_G = 15 Ω, V_GS = -5 to 18 V	-	12.9	-	ns
t_r	Rise time		-	21.1	-	ns
t_d(off)	Turn-off delay time		-	36.3	-	ns
t_f	Fall time		-	19.2	-	ns

Table 7. Reverse SiC diode characteristics
Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
I_SD¹	Continuous diode forward current	T_C = 25 °C	-		40	A
I_SD¹	Continuous diode forward current	T_C = 100 °C	-		40	A
V_SD	Diode forward voltage	I_SD = 16 A, V_GS = 0 V	-	2.6		V
t_rr	Reverse recovery time	I_SD = 16 A, di/dt = 1000 A/μs, V_DD = 800 V, V_GS = -5 V	-	14.7		ns
Q_rr	Reverse recovery charge		-	94.2		nC
I_RRM	Reverse recovery current		-	10.6		A

¹ Limited by bonding wires.

Electrical characteristics (curves)


Figure 1. Safe operating area	Figure 2. Maximum transient thermal impedance


Figure 3. Typical output characteristics (T_J = 25 °C)	Figure 4. Typical output characteristics (T_J = 175 °C)


Figure 5. Typical transfer characteristics	Figure 6. Total power dissipation


Figure 7. Typical gate charge characteristics	Figure 8. Typical capacitance characteristics


Figure 9. Typical switching energy vs R_g	Figure 10. Typical switching energy vs V_DS


Figure 11. Typical switching energy vs drain current	Figure 12. Typical switching energy vs T_C


Figure 13. Maximum continuous drain current vs case temperature	Figure 14. Normalized breakdown voltage vs temperature


Figure 15. Normalized gate threshold vs temperature	Figure 16. Normalized on-resistance vs temperature


Figure 17. Typical reverse conduction characteristics (T_J = 25 °C)	Figure 18. Typical reverse conduction characteristics (T_J = 175 °C)

Package information

To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.

HU3PAK package information

Table 8. HU3PAK package mechanical data
Ref.	Dimensions
	mm
	Min.	Typ.	Max.
A	3.40	3.50	3.60
A1		0.05
b	0.50	0.60	0.70
b2	0.50	0.70	1.00
b3	0.80	0.90	1.00
c	0.40	0.50	0.60
c2	0.40	0.50	0.60
D	11.70	11.80	11.90
D1	8.80	8.955	9.10
E	13.90	14.00	14.10
E1	12.30	12.40	12.50
E2	7.75	7.80	7.85
e		1.27
H	18.00	18.58	19.00
aaa		0.10
L	2.40	2.52	2.60
L1		3.05
L2	0.90	1.00	1.10
L3		0.26
L4	0.075	0.125	0.175
L5	1.83	1.93	2.03
L6	2.14	2.24	2.34
L7	4.44	4.54	4.64
F1	2.90	3.00	3.10
F2	2.40	2.50	2.60
F3	0.25	0.35	0.45
N1	3.80	3.90	4.00
N2	0.25	0.30	0.45
N3	0.80	0.90	1.00
T	0.50	0.67	0.70
T2	9.18	9.38	9.43
V1		0 °	8 °
V2		0 °	8 °

Figure 20. HU3PAK recommended footprint (dimensions in mm)

HU3PAK packing information

Table 9. HU3PAK tape mechanical data
Dimension	Value
Dimension	mm
A0	14.40 ±0.10
B0	19.70
D	1.50 ±0.10
E	1.75 ±0.10
F	15.65 ±0.10
I0	11.00
I1	11.60 ±0.10
I2	8.00
I3	7.00
K0	4.20
P0	4.00 ±0.10
P1	20.00 ±0.10
P2	2.00 ±0.10
T	0.40 ±0.50
W	32.00 ±0.30

Figure 22. HU3PAK reel outline (dimensions are in mm)

Revision history

Table 10. Document revision history
Date	Revision	Changes
03-Oct-2022	1	First release.
16-Sep-2024	2	Updated Section product summary in cover page.
21-Jan-2025	3	Updated Table 1 Absolute maximum ratings, Table 3 On/off states and Table 7 Reverse SiC diode characteristics. Added Figure 13 Maximum continuous drain current vs case temperature.

List of figures

Figure 1. Safe operating area

Figure 2. Maximum transient thermal impedance

Figure 3. Typical output characteristics (TJ= 25 °C)

Figure 4. Typical output characteristics (TJ= 175 °C)

Figure 5. Typical transfer characteristics

Figure 6. Total power dissipation

Figure 7. Typical gate charge characteristics

Figure 8. Typical capacitance characteristics

Figure 9. Typical switching energy vs Rg

Figure 10. Typical switching energy vs VDS

Figure 11. Typical switching energy vs drain current

Figure 12. Typical switching energy vs TC

Figure 13. Maximum continuous drain current vs case temperature

Figure 14. Normalized breakdown voltage vs temperature

Figure 15. Normalized gate threshold vs temperature

Figure 16. Normalized on-resistance vs temperature

Figure 17. Typical reverse conduction characteristics (TJ= 25 °C)

Figure 18. Typical reverse conduction characteristics (TJ= 175 °C)

Figure 19. HU3PAK package outline

Figure 20. HU3PAK recommended footprint (dimensions in mm)

Figure 21. HU3PAK carrier tape outline

Figure 22. HU3PAK reel outline (dimensions are in mm)




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