Silicon Carbide power devices for electric vehicles webinar

Accelerating vehicle electrification with Silicon Carbide power devices


Discover a new wave of Silicon Carbide products and how they are enhancing power conversion in electric vehicles.

The physical properties of wide bandgap (WBG) semiconductor materials are proving to be very attractive for power conversion, and a new wave a WBG power discrete products have reached the market in the past few years.

This webinar recording explains what makes Silicon Carbide (SiC) transistors and diodes so attractive, particularly for increasing the performance of electric vehicle (EV) and hybrid electrical vehicle (HEV) applications such as traction inverters and on-board chargers.

Finally, we will explore the unique challenges posed by processing SiC products in high volumes, and new packaging technologies including modules designed to exploit Silicon Carbide’s high power density.

You will learn:

  • The basics of wide bandgap semiconductors
  • The benefits offered by SiC MOSFETs and diodes in EV/HEV applications
  • SiC EV traction inverter design example
  • SiC manufacturing challenges and ST solutions
  • New packaging options for SiC devices


Alfredo Arno is the Sr. Product Marketing Manager for Automotive Power Discrete Products and Modules in ST North America. Beginning his career in '96 as a researcher at the Microwave Modeling Department of TU Delft in the Netherlands, he joined ST in '98 in Italy to manage the company’s first RF power lab. He transferred to the US in 2001 to begin a career in product marketing. Since then, he has managed various products across markets ranging from power discretes to RFIC, including Bluetooth modules for the auto, industrial and medical sectors. Alfredo holds a Masters in Electronics and Microwave from the University of Palermo, Italy.    

About ST's Silicon Carbide products

ST’s portfolio of silicon carbide devices includes 650 / 1200 V SiC MOSFETs featuring the industry’s highest junction temperature rating of 200 °C for more efficient and simplified designs, and SiC diodes ranging from 600 to 1200 V which feature negligible switching losses and 15% lower forward voltage (VF) than standard silicon diodes.