Achieving Peak Performance in Power Applications using MDmesh™ High-Voltage Super-Junction MOSFETs

From motor control to vehicle electrification and everything in-between, learn how ST’s market-leading power MOSFETs are each tailored to optimize your specific application

Missed the live event? Watch the recorded webinar to learn about ST’s super-junction high-voltage MOSFET technology, MDmesh™. Spanning voltage ratings from 250 V to 1500 V, these discrete devices are advancing the performance of power topologies across a wide application spectrum. ST’s broad family portfolio and available package options will also be presented, along with some application examples.

You will hear how each MDmesh™ family is tailored for high performance in specific applications, from resonant converters to flybacks, and see examples of the performance benefits to your next design.

Webinar topics:

• what makes the MDmesh™ structure so effective
• a description of the target applications for each of the 5 MDmesh™ families
• what makes each family optimal for those applications
• about the diverse packaging options available
• how ST plans to continue to innovate MDmesh™ in the years to come

About MDmesh™ MOSFETs

• The Super-Junction MOSFET structure allows shrinking of the epitaxial layer of the vertical MOS compared to planar types, reducing R_DS(on) for a given die area.
• There are five modern families of MDmesh devices – M5, M2, M6, M8, and K5, spanning drain voltage ratings from 250 V to 1500 V.
• Each is optimal for differing power applications like CCM PFCs, resonant converters, ZVS bridges, or flybacks.
• ST is continuing innovation with extensions of the M6 and M8 families, and currently developing the M9.
• Diverse SMT and through-hole packaging, as well as module options, allow mechanical ease of design in any application.